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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK319 description drain current C i d =5a@ t c =25 drain source voltage- : v dss = 400v(min) fast switching speed applications high speed power switching. absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 400 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 5 a p tot total dissipation@tc=25 50 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK319 electrical characteristics (t c =25 ) symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0; i d = 10ma 400 v v gs(th) gate threshold voltage v ds = 10v gs ; i d = 1ma 1.0 5.0 v r ds(on) drain-source on-stage resistance v gs = 15v; i d = 3a 1.10 1.83 i gss gate source leakage current v gs = 20v; v ds = 0 1 ua i dss zero gate voltage drain current v ds =320v; v gs = 0 1 ma v sd diode forward voltage i f = 3a; v gs =0 0.85 v tr rise time v gs =15v;i d =2a;r l =15 35 ns ton turn-on time 50 ns tf fall time 35 ns toff turn-off time 120 ns pdf pdffactory pro www.fineprint.cn |
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